| PART |
Description |
Maker |
| C3D06060A |
Silicon Carbide Schottky Diode Z-Rec Rectifier 600-Volt Schottky Rectifier
|
Cree, Inc
|
| C3D03060E |
3A, 600V, Z-Rec? Schottky, TO-252-2 package
|
Wolfspeed
|
| C3D04060E |
4A, 600V, Z-Rec? Schottky, TO-252-2 package
|
Wolfspeed
|
| APT15S20BCT ABT15S20BCT APT15S20BCTG |
MOSFET
HIGH VOLTAGE SCHOTTKY DIODE
Schottky Center Tap RECTIFIER; Package: TO-247 [B]; VR (V): 200; IO (A): 15; VF (V): 0.8; trr (nsec): 20; Qrr (nC): 440;
|
Advanced Power Technology Ltd.
MICROSEMI POWER PRODUCTS GROUP
|
| STC03DE170HP07 STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http://
ST Microelectronics, Inc.
STMicroelectronics
|
| STC04IE170HV |
Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W
Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17 W
|
STMicroelectronics
|
| IRFP460 6179 -IRFP460 |
N-Channel 500V-0.22惟-20A- TO-247 PowerMESH MOSFET(N娌??MOSFET)
N-Channel 500V-0.22Ω-20A- TO-247 PowerMESH MOSFET(N沟道MOSFET) N沟道500V -0.22Ω- 20A条至247 PowerMESH MOSFET的（不适用沟道MOSFET的）
N-Channel Power MOSFET
N - CHANNEL 500V - 0.22 - 20 A - TO-247 PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET
|
IXYS, Corp.
意法半导
ST Microelectronics
STMicroelectronics
|
| APTDF100H20G |
FRED 50-1700V
|
Microsemi
|
| APT60DF60HJ |
FRED 50-1700V
|
Microsemi
|
| APTDF200H100G |
FRED 50-1700V
|
Microsemi
|
